发明名称 |
MEMS structure having rounded edge stopper and method of fabricating the same |
摘要 |
A method of fabricating MEMS device includes forming a plurality of rounded edge trenches on a sacrificial layer over a carrier substrate. Then, formation of a polycrystalline silicon layer over the sacrificial layer to fill the trenches. A plurality of stoppers is defined by the trenches and protrudes from the polycrystalline silicon layer toward the carrier substrate Subsequently, a portion of the sacrificial layer is removed to define a recess between the polycrystalline silicon layer and a carrier substrate and expose the stoppers. |
申请公布号 |
US9517927(B2) |
申请公布日期 |
2016.12.13 |
申请号 |
US201514700138 |
申请日期 |
2015.04.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
Chan Chih-Jen;Wu Chang-Ming |
分类号 |
B81B3/00;B81C1/00 |
主分类号 |
B81B3/00 |
代理机构 |
Maschoff Brennan |
代理人 |
Maschoff Brennan |
主权项 |
1. A method of fabricating a MEMS device, comprising:
forming a plurality of rounded edge trenches on a sacrificial layer over a carrier substrate; forming a polycrystalline silicon layer over the sacrificial layer to fill the trenches, wherein a plurality of stoppers are defined by the trenches and protrude from the polycrystalline silicon layer toward the carrier substrate; etching the polycrystalline silicon layer through to the sacrificial layer to form a plurality of vias; and removing a portion of the sacrificial layer by selective etching through the vias to define a recess between the polycrystalline silicon layer and a carrier substrate and to expose the stoppers. |
地址 |
Hsinchu TW |