发明名称 MEMS structure having rounded edge stopper and method of fabricating the same
摘要 A method of fabricating MEMS device includes forming a plurality of rounded edge trenches on a sacrificial layer over a carrier substrate. Then, formation of a polycrystalline silicon layer over the sacrificial layer to fill the trenches. A plurality of stoppers is defined by the trenches and protrudes from the polycrystalline silicon layer toward the carrier substrate Subsequently, a portion of the sacrificial layer is removed to define a recess between the polycrystalline silicon layer and a carrier substrate and expose the stoppers.
申请公布号 US9517927(B2) 申请公布日期 2016.12.13
申请号 US201514700138 申请日期 2015.04.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 Chan Chih-Jen;Wu Chang-Ming
分类号 B81B3/00;B81C1/00 主分类号 B81B3/00
代理机构 Maschoff Brennan 代理人 Maschoff Brennan
主权项 1. A method of fabricating a MEMS device, comprising: forming a plurality of rounded edge trenches on a sacrificial layer over a carrier substrate; forming a polycrystalline silicon layer over the sacrificial layer to fill the trenches, wherein a plurality of stoppers are defined by the trenches and protrude from the polycrystalline silicon layer toward the carrier substrate; etching the polycrystalline silicon layer through to the sacrificial layer to form a plurality of vias; and removing a portion of the sacrificial layer by selective etching through the vias to define a recess between the polycrystalline silicon layer and a carrier substrate and to expose the stoppers.
地址 Hsinchu TW