| 摘要 |
In the DRAM cell capacitor composed of storage electrode, dielectric film and plate electrode, the storage electrode consists of a first polysilicon layer (51) which is connected to MOS source and expands parallel to the substrate; a second polysilicon layer (52) which is isolated from the top of (51) and expands parallel to the substrate; a third polysilicon layer (53) which is isolated from the top of (52) and expands parallel to the substrate; and a polysilicon sidewall (54) which meshes together with ends (51,',52',53') of polysilicon layers like a saw-toothed form and expands perpendicular in the directions of polysilicon layers.
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