| 摘要 |
The device includes three NMOS transistors (MN1,MN2,MN3) and two PMOS transistors (MP6,MP7), a 1st amplifying means for amplifying the difference voltage of a nodes (1)(2) by the 1st sensing signal (PSN1) of the low edge, a 2nd amplifying means for amplifying the difference voltage of the two nodes(1)(2) by the 2nd sensing signal (PSP1) of the low edge, a 3rd amplifying means for amplifying the difference voltage of two nodes (4)(5) by the 3rd sensing signal (PSN2) of the low edge, a 4th amplifying means for amplifying the difference voltage of the two nodes(4)(5) by the 4th sensing signal (PSP2) of the low edge, This method improves the sensitivity of the differential amplifier and, the sensing speed is within the 3nd.
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