| 发明名称 |
METHOD FOR ETCHING OF FIRE-RESISTANT METAL LAYER AT INSIDE OF PARALLEL-PLATE REACTOR DURING MANUFACTURE OF DEVICE ON SEMICONDUCTOR SUBSTRATE |
| 摘要 |
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| 申请公布号 |
JPH0629253(A) |
申请公布日期 |
1994.02.04 |
| 申请号 |
JP19920122983 |
申请日期 |
1992.04.17 |
| 申请人 |
INTEL CORP |
发明人 |
RITSUKII ERU DEIBISU;SOHAIRU YUU AAMEDO;SURIDAA BARAKURISHIYUNAN |
| 分类号 |
H01L21/28;H01L21/302;H01L21/3065;H01L21/3205;H01L21/321;H01L21/3213;H01L21/768;(IPC1-7):H01L21/302;H01L21/320;H01L21/90 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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