| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a display device having thin-film transistors with high electric characteristics and high reliability, in high mass productivity.SOLUTION: In a display device having an inverted staggered thin film transistor of channel etch structure, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film (also called as a semi-amorphous semiconductor film) which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions. In the steps, the microcrystalline semiconductor film is formed over the gate insulating film having its surface subjected to hydrogen plasma.SELECTED DRAWING: Figure 1 |
