| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device which does not require high voltage in writing, generates fewer defects, and requires shorter time in writing, and in which data cannot be rewritten without increasing cost.SOLUTION: The semiconductor storage device includes a first transistor connected to a diode, a second transistor with a gate connected to one terminal of a source electrode and a drain electrode of the first transistor connected to the diode, and a memory element with a capacitor connected to the gate of the second transistor and to the one terminal of the source electrode and the drain electrode of the first transistor connected to the diode.SELECTED DRAWING: Figure 1 |
