| 摘要 |
PURPOSE:To facilitate formation. machining, and elimination using a photoresist surface itself as an ARC(anti-reflection) film. CONSTITUTION:The surface of a photoresist 1 applied on a substrate 2 is half exposed, thus forming a region 1A with a refractive index different from the original refractive index and achieving the effect as an ARC film on the photoresist surface itself. Therefore, by reducing the multi-reflection effect inside the film, the photoresist profile and the pattern dimension controllability can be improved. |
