发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having high integration.SOLUTION: A semiconductor device comprises a substrate, a prismatic insulator and a memory cell string having a plurality of transistors connected in series. The prismatic insulator is arranged on the substrate; and the memory cell string is arranged on a lateral face of the prismatic insulator; and the plurality of transistors each has a gate insulator and a gate electrode; and the gate insulator has a first insulator, a second insulator and a charge storage layer; and the charge storage layer is arranged between the first insulator and the second insulator.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016225614(A) |
申请公布日期 |
2016.12.28 |
申请号 |
JP20160098070 |
申请日期 |
2016.05.16 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;ATAMI TOMOAKI;ENDO YUTA |
分类号 |
H01L21/8247;H01L21/336;H01L27/115;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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