发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device having high integration.SOLUTION: A semiconductor device comprises a substrate, a prismatic insulator and a memory cell string having a plurality of transistors connected in series. The prismatic insulator is arranged on the substrate; and the memory cell string is arranged on a lateral face of the prismatic insulator; and the plurality of transistors each has a gate insulator and a gate electrode; and the gate insulator has a first insulator, a second insulator and a charge storage layer; and the charge storage layer is arranged between the first insulator and the second insulator.SELECTED DRAWING: Figure 1
申请公布号 JP2016225614(A) 申请公布日期 2016.12.28
申请号 JP20160098070 申请日期 2016.05.16
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;ATAMI TOMOAKI;ENDO YUTA
分类号 H01L21/8247;H01L21/336;H01L27/115;H01L29/786;H01L29/788;H01L29/792 主分类号 H01L21/8247
代理机构 代理人
主权项
地址