METHOD OF MANUFACTURING THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a thin film transistor simple in manufacturing processes and low in manufacturing cost.SOLUTION: A method of manufacturing a thin film transistor of the present invention includes the steps of: preparing a substrate and forming a gate electrode and a gate electrode insulating layer on the substrate; forming an electrically conducting layer on the gate electrode insulating layer; forming a first light blocking layer on the electrically conducting layer and performing exposure simultaneously from a front face and a rear face to form a first patterning light blocking layer; forming an eclectically conducting channel layer through an etching process; forming an electrically conducting layer and a second light blocking layer on the electrically conducting channel layer and performing exposure simultaneously from a front face and a rear face to form a second patterning light blocking layer; forming a semiconductor channel layer through an etching process; and forming a source electrode and a drain electrode on both facing sides of the semiconductor channel layer, respectively.SELECTED DRAWING: Figure 4