| 摘要 |
The present invention relates to a semiconductor device, and more specifically, a semiconductor device in which a main current flows in a direction of the thickness of a semiconductor substrate. An object of the present invention is to provide a semiconductor device where a main current flows in a direction of the thickness of a semiconductor substrate that enables to attain desirable electric characteristics. In order to achieve the above object, P type semiconductor regions (912) and N type semiconductor regions (913) are alternately provided with an interval therebetween, both regions in a surface of a second main surface (MS2) of a semiconductor substrate (901). Between the P type semiconductor regions and the N type semiconductor regions, trenches formed in the surface of the semiconductor substrate (901) is filled with insulators (914), thereby forming trench isolation structures (911). Moreover, a second main electrode (916) is formed in contact with both the P type semiconductor regions (912) and the N type semiconductor regions (913). |
