发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To achieve a manufacturing method for a semiconductor device which can secure stable joining quality.SOLUTION: The manufacturing method for a semiconductor device performs: a pre-joining step of placing an insulation layer 2 having a metal plate 1 provided on an upper surface on a pedestal 3, placing a metal terminal 4 on the metal plate 1, pressing an ultrasonic tool 5 against the metal terminal 4 to apply pressurizing force Pp to the terminal, and thereby fixing the metal terminal 4 and the metal plate 1 in a parallel state; and a main joining step of pressing the ultrasonic tool 5 against the metal terminal 4, applying ultrasonic vibration Vm to the terminal while applying pressurizing force Pm thereto, and thereby ultra-joining the metal terminal 4 to the metal plate 1 after the pre-joining step.SELECTED DRAWING: Figure 4
申请公布号 JP2016221527(A) 申请公布日期 2016.12.28
申请号 JP20150107355 申请日期 2015.05.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 SUZUKI EMI
分类号 B23K20/10;H01L21/607;H01R4/02;H01R43/02 主分类号 B23K20/10
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