发明名称 EXTERNALLY-STRAIN-ENGINEERED SEMICONDUCTOR PHOTONIC AND ELECTRONIC DEVICES AND ASSEMBLIES AND METHODS OF MAKING SAME
摘要 Externally-strained devices such as LED and FET structures as discussed herein may have strain applied before or during their being coupled to a housing or packaging substrate. The packaging substrate may also be strained prior to receiving the structure. The strain on the devices enables modulation of light intensity, color, and electrical currents in some embodiments, and in alternate embodiments, enables a fixed strain to be induced and maintained in the structures.
申请公布号 WO2016164765(A1) 申请公布日期 2016.10.13
申请号 WO2016US26707 申请日期 2016.04.08
申请人 UNIVERSITY OF HOUSTON SYSTEM 发明人 RYOU, Jae-Hyun;SHERVIN, Shahab;KIM, Seung Hwan
分类号 H01L21/8238;H01L27/092;H01L29/78 主分类号 H01L21/8238
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