发明名称 |
POLYMER FOR RESIST UNDERLAYER FILM MATERIAL, RESIST UNDERLAYER FILM MATERIAL, AND PATTERN FORMATION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a polymer for resist underlayer film material which can form a resist underlayer film having excellent alkaline hydrogen peroxide water resistance, excellent embedding/flattening properties, and excellent dry etching properties.SOLUTION: A polymer for resist underlayer film 3 material comprises a repeating unit represented by formula (1) and a repeating unit represented by formula (3) (Rs independently represent H or a methyl group; Ris a specific epoxy group or oxetane group).SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016185999(A) |
申请公布日期 |
2016.10.27 |
申请号 |
JP20150065760 |
申请日期 |
2015.03.27 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
KIKUCHI RIE;WATANABE TAKESHI;TACHIBANA SEIICHIRO;OGIWARA TSUTOMU |
分类号 |
C08F220/28;C08F220/32;G03F7/11;G03F7/26;G03F7/40;H01L21/027 |
主分类号 |
C08F220/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|