发明名称 POLYMER FOR RESIST UNDERLAYER FILM MATERIAL, RESIST UNDERLAYER FILM MATERIAL, AND PATTERN FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a polymer for resist underlayer film material which can form a resist underlayer film having excellent alkaline hydrogen peroxide water resistance, excellent embedding/flattening properties, and excellent dry etching properties.SOLUTION: A polymer for resist underlayer film 3 material comprises a repeating unit represented by formula (1) and a repeating unit represented by formula (3) (Rs independently represent H or a methyl group; Ris a specific epoxy group or oxetane group).SELECTED DRAWING: Figure 1
申请公布号 JP2016185999(A) 申请公布日期 2016.10.27
申请号 JP20150065760 申请日期 2015.03.27
申请人 SHIN ETSU CHEM CO LTD 发明人 KIKUCHI RIE;WATANABE TAKESHI;TACHIBANA SEIICHIRO;OGIWARA TSUTOMU
分类号 C08F220/28;C08F220/32;G03F7/11;G03F7/26;G03F7/40;H01L21/027 主分类号 C08F220/28
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