| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can easily form an air gap.SOLUTION: A semiconductor device manufacturing method of an embodiment comprises the steps of: forming a first inter-layer insulation film 15B, and first and second wiring patterns 21, 22 on a substrate; forming a second inter-layer insulation film 13B on an upper layer side than the first and second wiring patterns; performing drilling on the second inter-layer insulation film at a position where the first wiring pattern is arranged and at a position where the second wiring pattern is not formed at the same time thereby to form a first via hole 51 reaching the first wiring pattern and a second via hole 52 reaching the first inter-layer insulation film; and subsequently, removing the first inter-layer insulation film near the second wiring pattern to form an air gap between the second wiring patterns.SELECTED DRAWING: Figure 1B |
