发明名称 LARGE AREA NANO-POSSIBLE MACROELECTRONIC SUBSTRATE AND ITS USE
摘要 PROBLEM TO BE SOLVED: To provide a method and apparatus for obtaining an electronic substrate having a plurality of semiconductor devices.SOLUTION: A nanowire thin film is formed on a substrate. The nanowire thin film is formed to have sufficient density of nanowires to achieve operating current level. A plurality of semiconductor regions are defined in the nanowire thin film. Contacts are formed in the semiconductor device area, thereby providing electrical connections to a plurality of semiconductor devices. In addition, various materials for manufacturing nanowires, thin films including p-type doped nanowires and n-type doped nanowires, nanowire heterostructures, luminescent nanowire heterostructures, flow masks for placing nanowires on substrates, techniques for spraying nanowires to deposit nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.SELECTED DRAWING: None
申请公布号 JP2016225659(A) 申请公布日期 2016.12.28
申请号 JP20160185264 申请日期 2016.09.23
申请人 ONED MATERIAL LLC 发明人 DUAN XIANGFENG;NIU CHUNMING;EMPEDOCLES STEPHEN;ROMANO LINDA T;CHEN JIAN;SAHI VIJENDRA;BOCK LAWRENCE;STUMBO DAVID;PARCE J WALLACE;GOLDMAN JAY L
分类号 H01L29/06;B82Y20/00;B82Y25/00;B82Y30/00;B82Y40/00;C01B31/02;H01L21/00;H01L21/336;H01L21/77;H01L27/12;H01L29/786;H01L33/20;H01L35/32;H01L41/087;H01L41/18;H01L41/22;H01L51/00;H01L51/05;H03H11/20 主分类号 H01L29/06
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