发明名称 |
Reinforcing sheet and method for producing secondary mounted semiconductor device |
摘要 |
Provided are a reinforcing sheet which is capable of forming a secondary mounted semiconductor device excellent in impact resistance and which is capable of enhancing efficiency of a secondary mounting process; and a method for producing a secondary mounted semiconductor device using the reinforcing sheet. The present invention provides a reinforcing sheet for reinforcing a secondary mounted semiconductor device in which a primary mounted semiconductor device with a bump electrode formed on a first main surface is electrically connected to a wiring substrate through the bump electrode, wherein the reinforcing sheet includes a base material layer, a pressure-sensitive adhesive layer, and a thermosetting resin layer in this order, and the pressure-sensitive adhesive layer has a breaking strength of 0.07 MPa or more, and a melt viscosity of 4000 Pa·s or less at 60 to 100° C. |
申请公布号 |
US9472439(B2) |
申请公布日期 |
2016.10.18 |
申请号 |
US201414775445 |
申请日期 |
2014.03.12 |
申请人 |
NITTO DENKO CORPORATION |
发明人 |
Takamoto Naohide;Morita Kosuke;Senzai Hiroyuki |
分类号 |
H01L21/683;B32B27/08;H01L21/56;H01L23/00;B32B7/12;B32B5/02;B32B5/26;B32B15/08;B32B25/06;B32B25/08;B32B25/10;B32B25/12;B32B25/14;B32B27/10;B32B27/12;B32B27/20;B32B27/22;B32B27/28;B32B27/30;B32B27/32;B32B27/34;B32B27/36;B32B27/38;B32B27/40;B32B27/42;B32B29/00;H01L23/31 |
主分类号 |
H01L21/683 |
代理机构 |
Alleman Hall McCoy Russell & Tuttle LLP |
代理人 |
Alleman Hall McCoy Russell & Tuttle LLP |
主权项 |
1. A reinforcing sheet for reinforcing a secondary mounted semiconductor device in which a primary mounted semiconductor device with a bump electrode formed on a first main surface is electrically connected to a wiring substrate through the bump electrode, wherein
the reinforcing sheet comprises a base material layer, a pressure-sensitive adhesive layer and a thermosetting resin layer in this order, and the pressure-sensitive adhesive layer has a breaking strength of 0.07 MPa or more, and a melt viscosity of 4000 Pa·s or less at 60 to 100° C. |
地址 |
Ibaraki-shi JP |