发明名称 Reinforcing sheet and method for producing secondary mounted semiconductor device
摘要 Provided are a reinforcing sheet which is capable of forming a secondary mounted semiconductor device excellent in impact resistance and which is capable of enhancing efficiency of a secondary mounting process; and a method for producing a secondary mounted semiconductor device using the reinforcing sheet. The present invention provides a reinforcing sheet for reinforcing a secondary mounted semiconductor device in which a primary mounted semiconductor device with a bump electrode formed on a first main surface is electrically connected to a wiring substrate through the bump electrode, wherein the reinforcing sheet includes a base material layer, a pressure-sensitive adhesive layer, and a thermosetting resin layer in this order, and the pressure-sensitive adhesive layer has a breaking strength of 0.07 MPa or more, and a melt viscosity of 4000 Pa·s or less at 60 to 100° C.
申请公布号 US9472439(B2) 申请公布日期 2016.10.18
申请号 US201414775445 申请日期 2014.03.12
申请人 NITTO DENKO CORPORATION 发明人 Takamoto Naohide;Morita Kosuke;Senzai Hiroyuki
分类号 H01L21/683;B32B27/08;H01L21/56;H01L23/00;B32B7/12;B32B5/02;B32B5/26;B32B15/08;B32B25/06;B32B25/08;B32B25/10;B32B25/12;B32B25/14;B32B27/10;B32B27/12;B32B27/20;B32B27/22;B32B27/28;B32B27/30;B32B27/32;B32B27/34;B32B27/36;B32B27/38;B32B27/40;B32B27/42;B32B29/00;H01L23/31 主分类号 H01L21/683
代理机构 Alleman Hall McCoy Russell & Tuttle LLP 代理人 Alleman Hall McCoy Russell & Tuttle LLP
主权项 1. A reinforcing sheet for reinforcing a secondary mounted semiconductor device in which a primary mounted semiconductor device with a bump electrode formed on a first main surface is electrically connected to a wiring substrate through the bump electrode, wherein the reinforcing sheet comprises a base material layer, a pressure-sensitive adhesive layer and a thermosetting resin layer in this order, and the pressure-sensitive adhesive layer has a breaking strength of 0.07 MPa or more, and a melt viscosity of 4000 Pa·s or less at 60 to 100° C.
地址 Ibaraki-shi JP