| 摘要 |
PROBLEM TO BE SOLVED: To realize the suppression of alloy scattering, the reduction of a crystal defect at the boundary surface of a space layer with a carrier running layer, and high carrier mobility by the improvement of the surface flatness of the spacer layer, while maintaining high carrier concentration.SOLUTION: A compound semiconductor device includes: a carrier running layer 2b; a carrier supply layer 2d, composed of InAlN, formed upward of the carrier running layer 2b; and a spacer layer 2c, composed of at least one of AlGaN and InAlGaN, formed between the carrier running layer 2b and the carrier supply layer 2d.SELECTED DRAWING: Figure 2 |
