发明名称 EVALUATION METHOD FOR SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor wafer evaluation method capable of classifying all LPDs into a killer defect and a foreign substance while including even a saturated LPD from which quantitative size information cannot be obtained.SOLUTION: The semiconductor wafer evaluation method includes the steps of: detecting the LPD of a semiconductor wafer that is a sample for inspection, in two measurement modes of DWO and DNO; classifying a size of the LPD; calculating a distance and a relative angle between detection coordinates in the two measurement modes; presetting a discrimination criterion that discriminates the LPD as a foreign substance or a killer defect for each classification size; detecting the LPD of a semiconductor wafer that is an evaluation object in the two measurement modes; classifying the size of the LPD of the evaluation object; calculating the distance and the relative angle between the detection coordinates regarding the evaluation object; and classifying the LPD that is detected on a surface of the evaluation object into the killer defect or the foreign substance based on results of the calculation and the discrimination criterion.SELECTED DRAWING: Figure 1
申请公布号 JP2016225347(A) 申请公布日期 2016.12.28
申请号 JP20150107398 申请日期 2015.05.27
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 KATO MASAHIRO
分类号 H01L21/66 主分类号 H01L21/66
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