发明名称 PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing device or method enhancing the yield of processing.SOLUTION: A plasma processing device for processing a wafer of processing object placed on the upper surface of a sample table arranged in the processing chamber in a vacuum container, by using plasma formed by supplying an electric field of microwaves into the processing chamber, has a microwave absorber placed on the surface of a member constituting the processing chamber, and a cover placed to cover the surface of the microwave absorber and constituting the inner wall surface of the processing chamber, and reduces deposits on the cover surface by supplying the electric field into the processing chamber, between the processing of the wafer and the subsequent processing.SELECTED DRAWING: Figure 1
申请公布号 JP2016225579(A) 申请公布日期 2016.12.28
申请号 JP20150113581 申请日期 2015.06.04
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 WATANABE TOMOYUKI;YASUI HISATERU
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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