| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-capacity semiconductor integrated circuit having high read speed.SOLUTION: Memory cells M(0,k) to M(m,k) are connected to a bit line BK(k), and reference memory cells RM(0,k) to RM(m,k) are connected to a reference bit line RBL. A sense circuit 109 compares current to an input terminal CELL with current to a reference input terminal REF, and outputs a signal indicative of the comparison result. A first current mirror including P-channel MOS transistors 107 and 108 supplies, to the input terminal CELL, current corresponding to cell current flowing to a memory cell via a bit line BL(k). A second current mirror including P-channel MOS transistors 107R and 108R supplies, to the reference input terminal REF, current corresponding to reference current flowing to the reference memory cell via the reference bit line RBL.SELECTED DRAWING: Figure 1 |
