| 摘要 |
Provided is an array substrate for a display device including an oxide thin film transistor preventing a decrease in properties of an oxide semiconductor layer caused by incident light by forming the oxide thin film transistor as a top gate type which arranges a gate electrode in an upper part of the oxide semiconductor layer. The array substrate for a display device of the present invention comprises: a substrate; an oxide semiconductor layer formed in an upper part of the substrate; a lower source electrode and a lower drain electrode being in contact with an upper surface of the both ends of the oxide semiconductor layer, respectively; a gate insulating layer formed in an upper part of the lower source electrode and the lower drain electrode; a gate electrode formed in an upper part of the gate insulating layer corresponding to the oxide semiconductor layer; a protective layer formed in an upper part of the gate electrode; and an upper source electrode and an upper drain electrode formed in an upper part of the protective layer, and connected to the lower source electrode and the lower drain electrode, respectively. |
