SOLID-STATE IMAGE CAPTURING ELEMENT, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE

摘要

The present disclosure relates to a solid-state image capturing element, a manufacturing method therefor, and an electronic device, which are capable of controlling a thickness of a depletion layer. The solid-state image capturing element includes pixels each in which a photoelectric conversion film configured to perform photoelectric conversion on incident light and a fixed charge film configured to have a predetermined fixed charge are stacked on a semiconductor substrate. The technology of the present disclosure can be applied to, for example, back surface irradiation type solid-state image capturing elements, image capturing devices such as digital still cameras or video cameras, mobile terminal devices having an image capturing function, and electronic devices using a solid-state image capturing element as an image capturing unit.

主权项

1. A solid-state image capturing element, comprising:
pixels each including a photoelectric conversion film and a fixed charge film stacked on a semiconductor substrate, the photoelectric conversion film being configured to perform photoelectric conversion on incident light, the fixed charge film being configured to have a predetermined fixed charge.