发明名称 IMAGE SENSORS WITH INCREASED STACK HEIGHT FOR PHASE DETECTION PIXELS
摘要 An image sensor may include a pixel array with a plurality of image pixels and a plurality of phase detection pixels. The plurality of phase detection pixels may have a greater stack height than the plurality of image pixels. Varying the stack height of pixels in the pixel array may enable the stack height of the image pixels to be optimized for gathering image data while the stack height of the phase detection pixels is optimized to gather phase detection data. A support structure may be used to increase the stack height of the phase detection pixels. The support structure may be formed over a color filter array or one or more microlenses. The support structure may include color filter elements to supplement or replace the color filter elements of the color filter array.
申请公布号 US2016269662(A1) 申请公布日期 2016.09.15
申请号 US201514656400 申请日期 2015.03.12
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 发明人 HEPPER Jason;BOETTIGER Ulrich
分类号 H04N5/369;H01L27/146;H04N9/04 主分类号 H04N5/369
代理机构 代理人
主权项 1. An image sensor having a pixel array, wherein the pixel array comprises: a plurality of image pixels that gather image data; a plurality of phase detection pixels that gather phase detection data, wherein each phase detection pixel has a respective photosensitive area; a plurality of support structures; and a color filter array with a plurality of color filter elements, wherein each photosensitive area is covered by a respective color filter element, wherein the respective color filter element of each phase detection pixel is covered by at least a portion of a support structure.
地址 Phoenix AZ US