| 摘要 |
PROBLEM TO BE SOLVED: To provide an impurity analysis method with which it is possible to analyze impurities with high accuracy from residual hot water after silicon crystal is grown by a Czochralski (CZ) method.SOLUTION: Provided is a method for analyzing impurities in the residual hot water of a silicon melt in a crucible after pulling up silicon crystal from the silicon melt accommodated in the crucible by the CZ method, the method carrying out the multi-operation of placing a silicon raw material into the crucible and heating and melting it, growing silicon crystal from a silicon melt using the CZ method, and then additionally placing a silicon raw material into the crucible and melting it and growing silicon crystal again, thereby growing two or more lengths of silicon crystal from one crucible. In the multi-operation, an overall solidification rate that is a ratio of the total weight of silicon crystal grown by the multi-operation to the total weight of the silicon raw material placed into the crucible is made to be 0.90 or greater, and impurities of the residual hot water in the crucible after silicon crystal growth by the multi-operation are analyzed.SELECTED DRAWING: Figure 6 |
