SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device comprises: a substrate (11); a semiconductor layer (12) formed on the substrate; a source electrode (13), a drain electrode (14) and a gate electrode (15) between the source electrode and the drain electrode formed on the semiconductor layer; and a source field plate (19) formed on the semiconductor layer. The source field plate sequentially comprises: a start portion (191) electrically connected to the source electrode; a first intermediate portion (192) spaced apart from the semiconductor layer with air therebetween; a second intermediate portion (193) disposed between the gate electrode and the drain electrode in a horizontal direction, without air between the second intermediate portion and the semiconductor layer; and an end portion (194) spaced apart from the semiconductor layer with air therebetween.