发明名称 Electrode structure for a light emitting device and corresponding light emitting device package
摘要 Provided is a light emitting device, the light emitting device including: a support member (160); a light emitting structure (145) on the support member, the light emitting structure comprising a first conductive type semiconductor layer (130), a second conductive type semiconductor layer (150), and an active layer (140) between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a protective member (155) at a peripheral region of an upper surface of the support member; an electrode (128) including an upper portion being on the first conductive type semiconductor layer, a side portion extended from the upper portion and being on a side surface of the light emitting structure, and an extended portion extended from the side portion and being on the protective member; and an insulation layer (125) between the side surface of the light emitting structure and the electrode.
申请公布号 EP2362449(B1) 申请公布日期 2016.12.28
申请号 EP20110154426 申请日期 2011.02.14
申请人 LG Innotek Co., Ltd. 发明人 Bae, Jung Hyeok;Jeong, Young Kyu;Park, Kyung Wook;Park, Duk Hyun
分类号 H01L33/38;H01L33/48;H05K1/18;H05K3/30 主分类号 H01L33/38
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