| 摘要 |
PROBLEM TO BE SOLVED: To reduce even though a normally-off field effect transistor is included, voltage between drain-source which is applied to the field effect transistor.SOLUTION: A field effect transistor 1 comprises: semiconductor layers (electron transit layer 14, electron supply layer 16); a source electrode 22 provided at the semiconductor layers 14, 16; a drain electrode 24 which is provided at the semiconductor layers 14, 16 and arranged away from the source electrode 22; a first gate electrode 32 provided between the source electrode 22 and the drain electrode 24; and a second gate electrode 34 which is provided between the source electrode 22 and the drain electrode 24 and at least a portion is closer to the drain electrode 24 than the first gate electrode 32. A first gate voltage Vwhen a first opposing portion 14a is started to be conducted is larger than a second gate voltage V(≥0 V) when a second opposing portion 14b is started to be conducted.SELECTED DRAWING: Figure 1 |
