| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability, high heat dissipation property and low resistance; and provide a semiconductor device manufacturing method capable of manufacturing the semiconductor device with high productivity.SOLUTION: The semiconductor device manufacturing method comprises the step of forming grooves 3 with a predetermined depth d from a surface of a semiconductor wafer 1 in scribe lines 2 formed by selectively removing a surface protection film 13 composed of a thermosetting resin which covers the surface of the semiconductor wafer 1. By forming the groove 3 in the scribe ine 2, an escape route of compression stress applied to the surface side of the semiconductor wafer 1 due to thermal shrinkage of the surface protection film 13 which occurs at the time of baking for forming the surface protection film 13 is ensured. By doing this, compression stress applied to the surface side of the semiconductor wafer 1 is alleviated so that subsequent thinning of the semiconductor wafer 1 becomes easier. The semiconductor device manufacturing method further comprises the steps of: forming a back electrode on a rear face of the thinned semiconductor wafer 1; and subsequently, dicing and singulating the semiconductor wafer 1.SELECTED DRAWING: Figure 6 |
