EPITAXIAL GROWTH DEVICE, METHOD FOR MANUFACTURING EPITAXIAL WAFER, AND LIFT PIN FOR EPITAXIAL GROWTH DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an epitaxial growth device capable of reducing generation of defects on a rear surface of an epitaxial silicon wafer and adhesion of particles to a surface of the wafer.SOLUTION: An epitaxial growth device comprises a support shaft including a susceptor 4 mounted with a silicon wafer W in a chamber and a support arm 17b supporting the susceptor 4 from below, and a lift pin 15 which freely moves the susceptor 4 and the support arm 17b in a vertical direction. This device attaches and detaches the silicon wafer W to and from the susceptor 4 by elevating and lowering the lift pin 15. At least a surface layer region of the lift pin 15 is composed of a material having lower hardness than the susceptor 4. Surface roughness in an upper region 15d in a straight body part of the lift pin 15 passing in a through hole 4h of the susceptor 4 is not less than 0.1 μm and not more than 0.3 μm, and surface roughness of a lower region 15c in the straight body part of the lift pin 15 passing in a through hole 17h of the support arm 17b is not less than 1 μm and not more than 10 μm.SELECTED DRAWING: Figure 3