A subfin layer is deposited in a trench in an insulating layer on the substrate. A fin is deposited on the subfin layer. The fin has a top portion and opposing sidewalls. The fin comprises a first semiconductor material. The subfin layer comprises a III-V semiconductor material.
申请公布号
WO2016204737(A1)
申请公布日期
2016.12.22
申请号
WO2015US36087
申请日期
2015.06.16
申请人
INTEL CORPORATION
发明人
RACHMADY, Willy;METZ, Matthew V. (Matt);LE, Van H.;PILLARISETTY, Ravi;DEWEY, Gilbert;KAVALIEROS, Jack T.;AGRAWAL, Ashish
