| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics such as Von-Eoff without increasing inter-collector gate capacitance.SOLUTION: A semiconductor device comprises: a semiconductor substrate; a base region formed on a surface side of the semiconductor substrate; a gate trench part which is formed to pierce the base region from a surface side of the base region; and a dummy trench part which is formed to pierce the base region from the surface side of the base region and in which a portion of the base region protruding on a rear face side is longer than a portion of the gate trench protruding on the rear face side of the base region.SELECTED DRAWING: Figure 1 |
