| 发明名称 |
GAS SUPPLY SYSTEM, GAS SUPPLY CONTROL METHOD AND GAS REPLACEMENT METHOD |
| 摘要 |
Throughput of the processing can be improved. A gas supply system includes a plurality of element devices which constitute the gas supply system and a base 212 on which the plurality of element devices are disposed. Some of the element devices are disposed on a surface 212a of the base 212, and the others are disposed on a surface 212b of the base 212, which is opposite to the surface 212a of the base 212. The plurality of element devices may be implemented by, for example, a flow rate controller FD and a secondary valve FV2. The secondary valve FV2 is disposed on the surface 212b, which is opposite to the surface 212a of the base 212 where the flow rate controller FD is disposed. |
| 申请公布号 |
US2016372348(A1) |
申请公布日期 |
2016.12.22 |
| 申请号 |
US201615183891 |
申请日期 |
2016.06.16 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Sawachi Atsushi;Amikura Norihiko;Sato Yoshiyasu |
| 分类号 |
H01L21/67;H01J37/32 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A gas supply system of supplying a gas into a processing apparatus, comprising:
a plurality of element devices which constitute the gas supply system; and a base on which the plurality of element devices are disposed, wherein some of the element devices are disposed on a first surface of the base and the others of the element devices are disposed on a second surface of the base, which is opposite to the first surface of the base. |
| 地址 |
Tokyo JP |
