| 发明名称 |
STRUCTURE AND METHOD FOR TUNABLE MEMORY CELLS INCLUDING FIN FIELD EFFECT TRANSISTORS |
| 摘要 |
In a particular aspect, an integrated circuit includes a first gate structure coupled to a first fin field effect transistor (FinFET) device. The integrated circuit includes a second gate structure coupled to a second FinFET device. The first gate structure and the second gate structure are separated by a dielectric region. The integrated circuit further includes a metal contact having a first surface that is in contact with the dielectric region, the first gate structure, and the second gate structure. |
| 申请公布号 |
US2016372316(A1) |
申请公布日期 |
2016.12.22 |
| 申请号 |
US201514746606 |
申请日期 |
2015.06.22 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Yang Haining;Liu Yanxiang |
| 分类号 |
H01L21/02;H01L27/02;G05B19/418;H01L27/11 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus comprising:
a first gate structure coupled to a first fin field effect transistor (FinFET) device; a second gate structure coupled to a second FinFET device, the first gate structure and the second gate structure separated by a dielectric region; and a metal contact having a first surface that is in contact with the dielectric region, the first gate structure, and the second gate structure, the first gate structure electrically coupled to the second gate structure via the metal contact. |
| 地址 |
San Diego CA US |
