发明名称 |
HIGH SPEED, HIGH VOLTAGE TOLERANT CIRCUITS IN FLASH PATH |
摘要 |
A circuit includes a first word line coupled to a non-volatile memory (NVM) cell. A first path includes a first inverter and a transistor. The transistor is coupled to the word line. The first path is coupled to receive a first input voltage signal. A second path includes at least the transistor coupled to the word line. At least a portion of the second path is embedded within the first path. The second path is coupled to receive a second input voltage signal. |
申请公布号 |
WO2016204826(A1) |
申请公布日期 |
2016.12.22 |
申请号 |
WO2016US18525 |
申请日期 |
2016.02.18 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
GEORGESCU, Bogdan;ZONTE, Cristinel;RAGHAVAN, Vijay |
分类号 |
G11C14/00 |
主分类号 |
G11C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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