SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device which is provided with: a semiconductor substrate doped with an impurity; an obverse surface side electrode provided on the obverse surface side of the semiconductor substrate; and a reverse surface side electrode provided on the reverse surface side of the semiconductor substrate. The semiconductor substrate includes: a peak region which is disposed on the reverse surface side of the semiconductor substrate and the impurity concentration of which has at least one peak; a high-concentration region which is disposed further toward the obverse surface side than the peak region, and the impurity concentration of which is more gentle than said at least one peak; and a low-concentration region which is disposed further toward the obverse surface side than the high-concentration region, and the impurity concentration of which is lower than that of the high-concentration region.