| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for processing a semiconductor wafer, capable of successfully subjecting a semiconductor wafer to processing that includes thinning and high-temperature processes, and a method for manufacturing a semiconductor device using the method.SOLUTION: A method for processing a semiconductor wafer includes the steps of: forming, on a semiconductor wafer, a film-like temporary fixation material comprising (A) a thermoplastic resin, (B) a (meth)acrylic monomer, and (C) a radical polymerization initiator generating radicals with radiation irradiation; irradiating the temporary fixation material formed on the semiconductor wafer with radiation; temporary fixing the semiconductor wafer and a support member via the temporary fixation material having been irradiated with radiation; subjecting the semiconductor wafer having been temporary fixed to the support member to processing; and separating the semiconductor wafer having been processed from the support member.SELECTED DRAWING: None |
