| 摘要 |
PROBLEM TO BE SOLVED: To reduce a size of a device including an IGBT.SOLUTION: An insulation gate bipolar transistor element including a gate, an emitter, and a collector, comprises a surge countermeasure part which is a high voltage protection member connected to at least two of the gate, emitter, and collector, and has a voltage-current characteristic indicating nonlinearity which dose not conform to ohm's law. An IGBT element 1 including a gate G, an emitter E, a collector C comprises the surge countermeasure part 3 which is connected to a gate C and the emitter E, and is formed by an insulation material with a varistor function. Thus, it is not required to separately provide the surge countermeasure element.SELECTED DRAWING: Figure 1 |
