High Isolation Switch

摘要

An embodiment integrated circuit includes a switch and a conductive line over the switch. The switch includes a gate, a first source/drain region at a top surface of a semiconductor substrate, and a second source/drain region at the top surface of the semiconductor substrate. The first source/drain region and the second source/drain region are disposed on opposing sides of the gate. At least a portion of the first conductive line is aligned with the gate, and the first conductive line is electrically coupled to ground.

主权项

1. A device comprising:
a substrate comprising:
a first well;a second well surrounding the first well; a switch supported by the first well of the substrate, the switch comprising:
a gate configured to receive a control signal;a first source/drain; anda second source/drain; a metallization structure comprising:
a first connection connected to the first source/drain, the first connection configured to receive an input signal;a second connection connected to the second source/drain, the second connection configured to provide an output signal when the switch is enabled and not to provide the output signal when the switch is disabled; anda third connection located between the first connection and the second connection, the third connection configured to be grounded.