| 发明名称 |
SUBSTRATE PROCESSING APPARATUS |
| 摘要 |
Provided are a substrate processing apparatus capable of performing a semiconductor process using a plasma and a method of forming a semiconductor device using the same. The substrate processing apparatus includes a process chamber, a high vacuum pump, an exhaust flow path between the high vacuum pump and the process chamber, and a vacuum valve in the exhaust flow path. The vacuum valve includes a first valve and a second valve having a smaller orifice than the first valve. |
| 申请公布号 |
US2016372347(A1) |
申请公布日期 |
2016.12.22 |
| 申请号 |
US201615008788 |
申请日期 |
2016.01.28 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM Hyuk;KIM Ha-Na;SHIN Kyoungsub;OH Jung-Ik |
| 分类号 |
H01L21/67 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing apparatus, comprising:
a process chamber; a high vacuum pump; an exhaust flow path between the high vacuum pump and the process chamber; and a vacuum valve in the exhaust flow path, the vacuum valve including a first valve and a second valve, the second valve having a smaller orifice than the first valve. |
| 地址 |
Suwon-si KR |
