METHOD OF READING AN ELECTRONIC MEMORY DEVICE

摘要

A method for reading an electronic memory device including N memory cells Ci with 1≧i≧N and N≧2, each cell Ci having a resistance Ri, the method including for each cell Ci, determining a set Ei of resistance values capable of being associated with the resistance Ri of the cell Ci; for each combination of N variables Vi, each variable Vi taking successively each resistance value among the predetermined set Ei, applying a mathematical function to the combination to obtain a resulting resistance value; for each combination of N variables Vi, associating a logic state of the electronic memory device with the resulting resistance value obtained previously, according to a comparison of the resulting resistance value with a same threshold resistance value; associating a resistance value with each resistance Ri to obtain a particular combination of N variables Vi; determining the logic state of the electronic memory device.

主权项

1. A method for reading an electronic memory device comprising a plurality N of memory cells of resistive random access memory type Ci with i varying from 1 to N and N≧2, each memory cell Ci having a resistance Ri, the method comprising in order the following steps:
for each memory cell Ci, determining a set Ei of resistance values capable of being associated with the resistance Ri of the memory cell Ci; for each combination of N variables Vi, each variable Vi taking successively each resistance value among the predetermined set Ei, applying a mathematical function to said combination to obtain a resulting resistance value; for each combination of N variables Vi, associating a logic state of the electronic memory device with the resulting resistance value obtained previously, according to a comparison of the resulting resistance value with a same threshold resistance value; associating a resistance value with each resistance Ri to obtain a particular combination of N variables Vi, and determining the logic state of the electronic memory device, the logic state being associated with the resulting resistance value corresponding to the particular combination.