发明名称 |
CARBON-BASED INTERFACE FOR EPITAXIALLY GROWN SOURCE/DRAIN TRANSISTOR REGIONS |
摘要 |
Techniques are disclosed for forming p-MOS transistors having one or more carbon-based interface layers between epitaxially grown S/D regions and the channel region. In some cases, the carbon-based interface layer(s) may comprise a single layer having a carbon content of greater than 20% carbon and a thickness of 0.5-8 nm. In some cases, the carbon-based interface layer(s) may comprise a single layer having a carbon content of less than 5% and a thickness of 2-10 nm. In some such cases, the single layer may also comprise boron-doped silicon (Si:B) or boron-doped silicon germanium (SiGe:B). In some cases, one or more additional interface layers may be deposited on the carbon-based interface layer(s), where the additional interface layer(s) comprises Si:B and/or SiGe:B. The techniques can be used to improve short channel effects and improve the effective gate length of a resulting transistor. |
申请公布号 |
WO2016204782(A1) |
申请公布日期 |
2016.12.22 |
申请号 |
WO2015US36657 |
申请日期 |
2015.06.19 |
申请人 |
INTEL CORPORATION |
发明人 |
GLASS, Glenn A.;KEYS, Patrick H.;KENNEL, Harold W.;MEHANDRU, Rishabh;MURTHY, Anand S.;JAMBUNATHAN, Karthik |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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