| 摘要 |
PROBLEM TO BE SOLVED: To provide a driving circuit of a semiconductor element, which can reduce a conduction loss of a MOSFET and achieve improved power conversion efficiency of an inverter.SOLUTION: A gate driving device 1b has: a current detector 9 for detecting a drain current Id(b) flowing in an arm part composed of a MOSFET 3b and a diode connected to the MOSFET in an antiparallel fashion; a current value detection circuit 10 for detecting a current value of the drain current Id(b) detected by the current detector 9; polarity determination circuit 11 of determining a polarity of the current value of the drain current Id(b) detected by the current value detection circuit 10; and a driving voltage control circuit 12 of selecting a power supply voltage value depending on a determination result determined by the polarity determination circuit 11.SELECTED DRAWING: Figure 2 |
