发明名称 |
STACKED THIN CHANNELS FOR BOOST AND LEAKAGE IMPROVEMENT |
摘要 |
A hollow-channel memory device comprises a source layer, a first hollow-channel pillar structure formed on the source layer, and a second hollow-channel pillar structure formed on the first hollow-channel pillar structure. The first hollow-channel pillar structure comprises a first thin channel and the second hollow-channel pillar structure comprises a second thin channel that is in contact with the first thin channel. In one exemplary embodiment, the first thin channel comprises a first level of doping; and the second thin channel comprises a second level of doping that is different from the first level of doping. In another exemplary embodiment, the first and second levels of doping are the same. |
申请公布号 |
EP3105793(A1) |
申请公布日期 |
2016.12.21 |
申请号 |
EP20150765157 |
申请日期 |
2015.03.02 |
申请人 |
Intel Corporation |
发明人 |
SIMSEK-EGE, Fatma Arzum;SUN, Jie Jason;LI, Benben;JAYANTI, Srikant;ZHAO, Han;HUANG, Guangyu;LIU, Haitao |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|