Semiconductor laser device

摘要

A semiconductor laser device in an embodiment includes a compound semiconductor layer and a silicon layer. The compound semiconductor layer includes an active layer emitting laser light and has a first mesa structure. The silicon layer is bonded with the compound semiconductor layer. A diffraction grating is provided on a surface of the silicon layer which faces the compound semiconductor layer, and includes a main diffraction grating and two sub-diffraction gratings. The main diffraction grating extends in a longitudinal direction of the first mesa structure; the sub-diffraction gratings are disposed on both sides of the main diffraction grating.

主权项

1. A semiconductor laser device comprising:
a compound semiconductor layer including an active layer emitting laser light, the compound semiconductor layer having a first mesa structure; and a silicon layer bonded with the compound semiconductor layer, a diffraction grating being provided on a surface of the silicon layer facing the compound semiconductor layer, the diffraction grating including a main diffraction grating and two sub-diffraction gratings, the main diffraction grating extending in a longitudinal direction of the first mesa structure, the sub-diffraction gratings being disposed on both sides of the main diffraction grating, wherein each of the main diffraction grating and the two sub-diffraction gratings is entirely disposed directly under the first mesa structure the main diffraction grating is disposed at a region containing a node of a first higher-order transverse mode of the laser light, each of the sub-diffraction gratings is disposed at a region containing a node of a second higher-order transverse mode of the laser light, and each of the sub-diffraction gratings is disposed with its period and phase substantially equal to those of the main diffraction grating.