Vertical memory devices and methods of manufacturing the same

摘要

Nonvolatile memory devices include at least four cylindrical-shaped channel regions, which extend vertically from portions of a substrate located at respective vertices of at least one rhomboid when viewed in a vertical direction relative to a surface of the substrate. A charge storage layer (e.g., ONO layer) is provided on an outer sidewall of each of the cylindrical-shaped channel regions. In addition, to achieve a high degree of integration, a plurality of vertically-stacked gate electrodes are provided, which extend adjacent each of the cylindrical-shaped channel regions.

主权项

1. A nonvolatile memory device, comprising:
at least four cylindrical-shaped channel regions extending vertically from portions of a substrate located at respective vertices of at least one rhomboid when viewed in a vertical direction relative to a surface of the substrate; a charge storage layer on an outer sidewall of each of said at least four cylindrical-shaped channel regions; a plurality of vertically-stacked gate electrodes extending adjacent each of said at least four cylindrical-shaped channel regions; and a plurality of bit lines extending over said at least four cylindrical-shaped channel regions, said plurality of bit lines including at least first, second and third bit lines electrically coupled to respective ones of said at least four cylindrical-shaped channel regions; and wherein the first, second and third bit lines extend parallel to each other and in a direction oblique relative to all sides of the at least one rhomboid when viewed in the vertical direction.