发明名称 |
PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE |
摘要 |
Improvement in yield of a semiconductor device is obtained. In addition, increase in service life of a socket terminal is obtained. A projecting portion PJ1 and a projecting portion PJ2 are provided in an end portion PU of a socket terminal STE1. Thus, it is possible to enable contact between a lead and the socket terminal STE in which a large current is caused to flow, at two points by a contact using the projecting portion PJ1 and by a contact using the projecting portion PJ2, for example. As a result, the current flowing from the socket terminal STE1 to the lead flows by being dispersed into a path flowing in the projecting portion PJ1 and a path flowing in the projecting portion PJ2. Accordingly, it is possible to suppress increase of temperature of a contact portion between the socket terminal STE1 and the lead even in a case where the large current is caused to flow between the socket terminal STE1 and the lead. |
申请公布号 |
EP2985614(A4) |
申请公布日期 |
2016.12.21 |
申请号 |
EP20130882020 |
申请日期 |
2013.04.11 |
申请人 |
Renesas Electronics Corporation |
发明人 |
ISHII, Toshitsugu;MAKIHIRA, Naohiro;IWASAKI, Hidekazu;MATSUHASHI, Jun |
分类号 |
G01R1/067;G01R1/04;G01R31/28;G01R31/40 |
主分类号 |
G01R1/067 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|