| 发明名称 |
SEMICONDUCTOR DEVICES HAVING 3D CHANNELS, AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING 3D CHANNELS |
| 摘要 |
A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film. |
| 申请公布号 |
US2016268393(A1) |
申请公布日期 |
2016.09.15 |
| 申请号 |
US201615164246 |
申请日期 |
2016.05.25 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HONG SOO-HUN;KANG HEE-SOO;KIM HYUN-JO;SIM SANG-PIL;JUNG HEE-DON |
| 分类号 |
H01L29/66;H01L29/06;H01L29/08;H01L21/8238;H01L29/16;H01L29/165;H01L29/78;H01L27/092;H01L29/161 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin; a first field insulating film arranged in the first trench; a second field insulating film arranged in the second trench; a first dummy gate arranged on the first field insulating film; and a second dummy gate at least partly arranged on the second field insulating film, wherein the first field insulating film has a T-shaped cross section in a vertical plane. |
| 地址 |
SUWON-SI KR |
