METHODS FOR FORMING METAL SILICIDE

摘要

A method for forming a metal silicide. The method comprises: providing a substrate having a fin, a gate formed on the fin, and spacers formed on opposite sides of the gate; depositing a Ti metal layer; siliconizing the Ti metal layer; and removing unreacted Ti metal layer. As the Ti atoms have relatively stable characteristics, diffusion happens mostly to Si atoms while the Ti atoms rarely diffuse during the thermal annealing. As a result, current leakage can be prevented in a depletion region and thus leakage current of the substrate can be reduced.

主权项

1. A method for forming a metal silicide, comprising:
providing a substrate, wherein the substrate contains silicon; forming a fin by etching the substrate; forming a gate on the fin; forming source and drain regions by doping in portions of fin on opposite sides of the gate; depositing a titanium (Ti) metal layer on the portions of the fin; siliconizing the Ti metal layer by reaction between the Ti metal and the silicon in the fin; and removing unreacted Ti metal layer.