发明名称 |
SEMICONDUCTOR DEVICES INCLUDING GATE INSULATION LAYERS ON CHANNEL MATERIALS AND METHODS OF FORMING THE SAME |
摘要 |
Semiconductor devices are provided. A semiconductor device includes a stack of alternating insulation layers and gate electrodes. The semiconductor device includes a channel material in a channel recess in the stack. The semiconductor device includes a charge storage structure on the channel material, in the channel recess. Moreover, the semiconductor device includes a gate insulation layer on the channel material. The gate insulation layer undercuts a portion of the channel material. Related methods of forming semiconductor devices are also provided. |
申请公布号 |
US2016268302(A1) |
申请公布日期 |
2016.09.15 |
申请号 |
US201614995845 |
申请日期 |
2016.01.14 |
申请人 |
Lee Jung-Hwan;Kim Jee-Yong;Byeon Dae-Seok |
发明人 |
Lee Jung-Hwan;Kim Jee-Yong;Byeon Dae-Seok |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Seoul KR |