SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

According to one embodiment, a stacked body of N layers is stacked on a semiconductor substrate, steps are provided in the stacked body such that upper layers are retracted behind lower layers, N lower openings are provided in correspondence with the individual layers of the stacked body and are equal in depth, one to N upper openings are provided on one to N lower openings and are different in depth, N lower-layer contact electrodes are provided in the lower openings, and one to N upper-layer contact electrodes are provided in the upper openings.

主权项

1. A semiconductor device, comprising:
a stacked body of N (N is an integer of 2 or more) layers stacked on a semiconductor substrate; steps provided in the stacked body such that upper layers are retracted behind lower layers; N lower openings that are provided in correspondence with the individual layers of the stacked body and are equal in depth; one to N upper openings that are provided on one to N lower openings and are different in depth; N lower-layer contact electrodes provided in the lower openings; and one to N upper-layer contact electrodes provided in the upper openings.